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NTLJD4116NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTLJD4116NT1G
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 6889
- Description: NTLJD4116NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 710mW |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.6A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.8 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 70m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 427pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| Rise Time | 11.8ns |
| Fall Time (Typ) | 11.8 ns |
| Turn-Off Delay Time | 14.2 ns |
| Continuous Drain Current (ID) | 3.7A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.09Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
NTLJD4116NT1G Description
ROHM N-channel and P-channel MOSFETs NTLJD4116NT1G feature low on-resistance and high switching speed. It has a wide lineup from small signal MOSFETs to power MOSFETs and can be used in various applications.
NTLJD4116NT1G Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
? 2x2 mm Footprint Same as SC?88
? Lowest RDS(on) Solution in 2x2 mm Package
? 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic
Level
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? This is a Pb?Free Device
NTLJD4116NT1G Applications
? DC?DC Converters (Buck and Boost Circuits)
? Low Side Load Switch
? Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
? Level Shift for High Side Load Switch
