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NTLJD3119CTAG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTLJD3119CTAG
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 1405
- Description: NTLJD3119CTAG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | µCool™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 710mW |
| Base Part Number | NTLJD3119C |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 710mW |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 271pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| Rise Time | 13.2ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 13.2 ns |
| Turn-Off Delay Time | 13.7 ns |
| Continuous Drain Current (ID) | 4.6A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3.8A |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 18A |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 700 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
NTLJD3119CTAG Description
Power MOSFET is a special type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.
NTLJD3119CTAG Features
? Complementary N?Channel and P?Channel MOSFET
? WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
? Footprint Same as SC?88 Package
? Leading Edge Trench Technology for Low On Resistance
? 1.8 V Gate Threshold Voltage
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? This is a Pb?Free Device
NTLJD3119CTAG Applications
? Synchronous DC?DC Conversion Circuits
? Load/Power Management of Portable Devices like PDA?ˉs, Cellular
Phones and Hard Drives
? Color Display and Camera Flash Regulators
