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NTLJD3115PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTLJD3115PT1G
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 7475
- Description: NTLJD3115PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Rise Time | 15ns |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 19.8 ns |
| Continuous Drain Current (ID) | 3.3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 100MOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 710mW |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4.1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTLJD3115P |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | 2 P-Channel (Dual) |
NTLJD3115PT1G Description
This P-Channel -1.8V specified MOSFET is produced by Fairchild using their state-of-the-art low voltage PowerTrench technology. It has been tuned for battery power management applications. This innovation makes an effort to boost avalanche energy, dv/dt rate, conduction loss, and switching performance.
NTLJD3115PT1G Features
? Exposed Drain Pad for Excellent Thermal Conduction is Provided by the WDFN Package
? Footprint of 2x2 mm similar to SC 88
? 2x2 mm Package with Lowest RDS(on)
? Operation at Low Voltage Gate Drive Logic Level: 1.8 V RDS(on) Rating
? Low Profile for Easy Fit in Thin Environments ( 0.8 mm)
? Configuration of Bidirectional Current Flow with Common Source
? This device is lead-free.
NTLJD3115PT1G Applications
? Application-Specific Optimization for Battery and Load Management
? Portable Resources
? Circuits for Li-Ion battery charging and protection
? High Side Switch Load
