NTL4502NT1

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics
  • NO: 699-NTL4502NT1
  • Package: 16-PowerQFN
  • Datasheet: pdf
  • Stock: 2730
  • Description: N-CHANNEL POWER MOSFET(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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User guide

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
Terminal Finish TIN LEAD
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 16
JESD-30 Code S-XQCC-N16
Qualification Status COMMERCIAL
Number of Elements 4
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 1.7W
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 20V
Current - Continuous Drain (Id) @ 25°C 11.4A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 24V
Drain Current-Max (Abs) (ID) 11.4A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 80 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Mounting Type Surface Mount
Package / Case 16-PowerQFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0

In Stock

Please send RFQ , we will respond immediately.