NTJD5121NT2G

NTJD5121NT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTJD5121NT2G
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 3449
  • Description: NTJD5121NT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Max Power Dissipation 250mW
Terminal Form GULL WING
Base Part Number NTJD5121N
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 22 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 295mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTJD5121NT2G    Description


  The device is designed to provide the lowest possible on-resistance and gate charge in the smallest configuration and has good thermal characteristics in ultra-low shape. Low resistance, small footprint and low shape make the device an ideal choice for battery-powered applications with limited space.


NTJD5121NT2G      FEATURES


Dual P-ChMOSFETs

Common Source Configuration Small Footprint 1mm*1.5mm Gate-Source Voltage Clamp Gate ESD Protection-3kV Pb Free

·RoHS Compliant

Halogen Free

 

NTJD5121NT2G     APPLICATIONS


Battery Management Load Switch

Battery Protection

 

 

 





In Stock

Please send RFQ , we will respond immediately.