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NTJD5121NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTJD5121NT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 9975
- Description: NTJD5121NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 1.6Ohm |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 266mW |
| Terminal Form | GULL WING |
| Base Part Number | NTJD5121N |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Turn On Delay Time | 22 ns |
| Power - Max | 250mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
| Rise Time | 34ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 295mA |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.7 V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTJD5121NT1G Description
The NTJD5121NT1G in the SC-88-6 package is a dual N-channel Power MOSFET with ESD protection, low gate threshold, and low input capacitance. The onsemi NTJD5121NT1G can be applied in low side load and DC?DC Converters (Buck and Boost Circuits) due to the following features. The NTJD5121NT1G operates within ambient temperatures from -55 to 150°C and with a power dissipation of 250mW.
NTJD5121NT1G Features
Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
This is a Pb?Free Device
NTJD5121NT1G Applications
Low Side Load Switch
DC?DC Converters
Buck and Boost Circuits
Power Management
Industrial
Infotainment systems
Radios
Navigation systems
Clusters
