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NTJD4152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTJD4152PT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 299
- Description: NTJD4152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 215MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 272mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -880mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTJD4152P |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 272mW |
| Turn On Delay Time | 5.8 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 260m Ω @ 880mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Rise Time | 6.5ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 6.5 ns |
| Turn-Off Delay Time | 13.5 ns |
| Continuous Drain Current (ID) | 880mA |
| Threshold Voltage | -1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 0.88A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 990.6μm |
| Length | 2.1844mm |
| Width | 1.3462mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTJD4152PT1G Description
P channel MOSFET is composed of P-channel, and P-channel is composed of most hole current carriers. The gate terminal is made of N-type material. Depending on the number and type of voltage (negative or positive), determine how the transistor works and whether it is turned on or off.
NTJD4152PT1G Features
? Leading Trench Technology for Low RDS(ON) Performance
? Small Footprint Package (SC70?6 Equivalent)
? ESD Protected Gate
? NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
? These are Pb?Free Devices
NTJD4152PT1G Applications
? Load/Power Management
? Charging Circuits
? Load Switching
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
