NTHD5903T1G

MOSFET -20V -3A Dual P-Channel


  • Manufacturer: ON Semiconductor
  • NO: 598-NTHD5903T1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 9223
  • Description: MOSFET -20V -3A Dual P-Channel(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating -2.2A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD5903
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 155m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.2A
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.155Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 6.35mm
Length 6.35mm
Width 6.35mm
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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