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NTHD4508NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTHD4508NT1G
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 298
- Description: NTHD4508NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2.1W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTHD4508N |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.13W |
| Turn On Delay Time | 5 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Rise Time | 15ns |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 4.1A |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.075Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 10A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTHD4508NT1G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTHD4508NT1G Features
? Low RDS(on) and Fast Switching Speed
? Leadless ChipFET Package has 40% Smaller Footprint than TSOP?6
? Excellent Thermal Capabilities Where Heat Transfer is Required
? Pb?Free Package is Available
NTHD4508NT1G Applications
? DC?DC Buck/Boost Converters
? Battery and Low Side Switching in Portable Equipment Such as MP3
Players, Cell Phones, DSCs and PDAs
? Level Shifting
