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NTHD4102PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTHD4102PT1G
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 1102
- Description: NTHD4102PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 hours ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Surface Mount | YES |
| Number of Pins | 8 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 64MOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1.1W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -7.3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTHD4102P |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Turn On Delay Time | 5.5 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 4.1A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.5 V |
| Height | 1.1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTHD4102PT1G Description
P-channel MOSFET NTHD4102PT1G is composed of P-channel, and P-channel is composed of most hole current carriers. The gate terminal is made of N-type material. Depending on the number and type of voltage (negative or positive), determine how the transistor works and whether it is turned on or off.
NTHD4102PT1G Features
? Offers an Ultra Low RDS(ON) Solution in the ChipFET Package
? Miniature ChipFET Package 40% Smaller Footprint than TSOP?6
? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
? Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
? Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
? Pb?Free Package is Available
NTHD4102PT1G Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
? Charge Control in Battery Chargers
? Buck and Boost Converters
