NTHD3100CT1G

NTHD3100CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTHD3100CT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 7620
  • Description: NTHD3100CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 2.9A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD3100C
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 6.3 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 11.7ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.05mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 hours ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES

NTHD3100CT1G        Description

 

In the power MOSFET, there is available of P-channel. The characteristics are similar to the N-channel MOSFET. The direction of the current and voltage polarities are in reverse direction.

 

NTHD3100CT1G                   Features


? Complementary N?Channel and P?Channel MOSFET

? Small Size, 40% Smaller than TSOP?6 Package

? Leadless SMD Package Provides Great Thermal Characteristics

? Trench P?Channel for Low On Resistance

? Low Gate Charge N?Channel for Test Switching

? Pb?Free Packages are Available


NTHD3100CT1G                Applications


? DC?DC Conversion Circuits

? Load Switch Applications Requiring Level Shift

? Drive Small Brushless DC Motors

? Ideal for Power Management Applications in Portable, Battery

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