NTGD3148NT1G

MOSFET 2N-CH 20V 3A 6TSOP


  • Manufacturer: ON Semiconductor
  • NO: 598-NTGD3148NT1G
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 3163
  • Description: MOSFET 2N-CH 20V 3A 6TSOP(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 900mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NTGD3148N
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Rise Time 11.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 12.8 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.07Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount

In Stock

Please send RFQ , we will respond immediately.