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NSVMMBT6520LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSVMMBT6520LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1203
- Description: NSVMMBT6520LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 200MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 350V |
| Current - Collector (Ic) (Max) | 500mA |
| Transition Frequency | 40MHz |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
NSVMMBT6520LT1G Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
NSVMMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
NSVMMBT6520LT1G Applications
There are a lot of ON Semiconductor NSVMMBT6520LT1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
