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NSVMMBT6517LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSVMMBT6517LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9670
- Description: NSVMMBT6517LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 225mW |
| Power - Max | 225mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 350V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 350V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
NSVMMBT6517LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 100mA volts can be achieved.
NSVMMBT6517LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
NSVMMBT6517LT1G Applications
There are a lot of ON Semiconductor NSVMMBT6517LT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
