NSVBC858CLT1G

NSVBC858CLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NSVBC858CLT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4404
  • Description: NSVBC858CLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 100mA
Max Frequency 100MHz
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
Height 1.11mm
Length 3.04mm
Width 2.64mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NSVBC858CLT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.100MHz is present in the transition frequency.The maximum collector current is 100mA volts.

NSVBC858CLT1G Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

NSVBC858CLT1G Applications


There are a lot of ON Semiconductor NSVBC858CLT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

In Stock

Please send RFQ , we will respond immediately.