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NSV20201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSV20201LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4834
- Description: NSV20201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 460mW |
| Frequency | 150MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 540mW |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 150MHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 6V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSV20201LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A transition frequency of 150MHz is present in the part.A maximum collector current of 2A volts is possible.
NSV20201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSV20201LT1G Applications
There are a lot of ON Semiconductor NSV20201LT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
