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NSV1C201MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSV1C201MZ4T1G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8629
- Description: NSV1C201MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Weight | 250.212891mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 800mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 100MHz |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 180mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 140V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 2A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSV1C201MZ4T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 200mA, 2A.Continuous collector voltages should be kept at 2A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts is possible.
NSV1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSV1C201MZ4T1G Applications
There are a lot of ON Semiconductor NSV1C201MZ4T1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
