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NSV1C200MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSV1C200MZ4T1G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8400
- Description: NSV1C200MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Weight | 188.014037mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Reference Standard | AEC-Q101 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 800mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 220mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -220mV |
| Collector Base Voltage (VCBO) | -140V |
| Emitter Base Voltage (VEBO) | -7V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSV1C200MZ4T1G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -220mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.There is a transition frequency of 120MHz in the part.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV1C200MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
NSV1C200MZ4T1G Applications
There are a lot of ON Semiconductor NSV1C200MZ4T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
