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NSS40501UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS40501UW3T2G
- Package: 3-WDFN Exposed Pad
- Datasheet:
- Stock: 5108
- Description: NSS40501UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Frequency | 150MHz |
| Base Part Number | NSS40501 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Power - Max | 875mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 200 |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS40501UW3T2G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 400mA, 4A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 5A volts at its maximum.
NSS40501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS40501UW3T2G Applications
There are a lot of ON Semiconductor NSS40501UW3T2G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
