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NSS40201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS40201LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5361
- Description: NSS40201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 540mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NSS40201 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 540mW |
| Power - Max | 460mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 115mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 200 |
| Turn On Time-Max (ton) | 860ns |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS40201LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 115mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 115mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.In the part, the transition frequency is 150MHz.An input voltage of 40V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.
NSS40201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 115mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS40201LT1G Applications
There are a lot of ON Semiconductor NSS40201LT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
