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NSS35200MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS35200MR6T1G
- Package: SOT-23-6
- Datasheet:
- Stock: 4237
- Description: NSS35200MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -35V |
| Max Power Dissipation | 625mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -2A |
| Frequency | 100MHz |
| Base Part Number | NSS35200 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 625mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A 1.5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
| Collector Emitter Breakdown Voltage | 35V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -260mV |
| Max Breakdown Voltage | 35V |
| Collector Base Voltage (VCBO) | 55V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
NSS35200MR6T1G Overview
DC current gain in this device equals 100 @ 1.5A 1.5V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -260mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 35V volts.During maximum operation, collector current can be as low as 2A volts.
NSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200MR6T1G Applications
There are a lot of ON Semiconductor NSS35200MR6T1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
