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NSS30071MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS30071MR6T1G
- Package: SC-74, SOT-457
- Datasheet:
- Stock: 6199
- Description: NSS30071MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Height | 1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 342mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 700mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NSS30071 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 665mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 70mA, 700mA |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 150 |
NSS30071MR6T1G Overview
This device has a DC current gain of 150 @ 100mA 3V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 70mA, 700mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 700mA.Single BJT transistor can take a breakdown input voltage of 30V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
NSS30071MR6T1G Features
the DC current gain for this device is 150 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 70mA, 700mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
NSS30071MR6T1G Applications
There are a lot of ON Semiconductor NSS30071MR6T1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
