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NSS20501UW3TBG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS20501UW3TBG
- Package: 3-WDFN Exposed Pad
- Datasheet:
- Stock: 7312
- Description: NSS20501UW3TBG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 875mW |
| Frequency | 150MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 1.5W |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 125mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 5A |
| Transition Frequency | 150MHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 6V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS20501UW3TBG Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 125mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.The part has a transition frequency of 150MHz.Collector current can be as low as 5A volts at its maximum.
NSS20501UW3TBG Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 125mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS20501UW3TBG Applications
There are a lot of ON Semiconductor NSS20501UW3TBG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
