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NSS20500UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS20500UW3T2G
- Package: 3-WDFN Exposed Pad
- Datasheet:
- Stock: 1378
- Description: NSS20500UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 875mW |
| Terminal Position | DUAL |
| Frequency | 100MHz |
| Base Part Number | NSS20500 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Power - Max | 875mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -270mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 250 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS20500UW3T2G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.As it features a collector emitter saturation voltage of -270mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 260mV @ 400mA, 4A.Emitter base voltages of 7V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.An input voltage of 100V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 5A volts.
NSS20500UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS20500UW3T2G Applications
There are a lot of ON Semiconductor NSS20500UW3T2G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
