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ContactNSS20200W6T1G
NSS20200W6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS20200W6T1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 1292
- Description: NSS20200W6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 555mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | NSS20200 |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 555mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 215mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 215mV @ 20mA, 2A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 7V |
| Turn Off Time-Max (toff) | 445ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
NSS20200W6T1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 215mV @ 20mA, 2A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.The breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2A volts.
NSS20200W6T1G Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 215mV @ 20mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS20200W6T1G Applications
There are a lot of ON Semiconductor NSS20200W6T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
