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NSS1C200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS1C200LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 119
- Description: NSS1C200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 710mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 120MHz |
| Base Part Number | NSS1C200 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 710mW |
| Power - Max | 490mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -40mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 140V |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS1C200LT1G Overview
This device has a DC current gain of 120 @ 50mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -40mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.120MHz is present in the transition frequency.Breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.
NSS1C200LT1G Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -40mV
the vce saturation(Max) is 250mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200LT1G Applications
There are a lot of ON Semiconductor NSS1C200LT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
