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NSS12600CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS12600CF8T1G
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 4125
- Description: NSS12600CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | -12V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 250 |
| Turn Off Time-Max (toff) | 590ns |
| Turn On Time-Max (ton) | 350ns |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 830mW |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 265 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 170mV |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 170mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Current - Collector (Ic) (Max) | 5A |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -140mV |
NSS12600CF8T1G Overview
In this device, the DC current gain is 250 @ 1A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -140mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 170mV @ 400mA, 4A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.A maximum collector current of 5A volts is possible.
NSS12600CF8T1G Features
the DC current gain for this device is 250 @ 1A 2V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 170mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS12600CF8T1G Applications
There are a lot of ON Semiconductor NSS12600CF8T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
