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NSS12200WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS12200WT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 7321
- Description: NSS12200WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NSS12200 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 650mW |
| Power - Max | 450mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 800mA 1.5 V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 20mA, 1A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -170mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 450mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Frequency | 100MHz |
NSS12200WT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 800mA 1.5 V.The collector emitter saturation voltage is -170mV, which allows for maximum design flexibility.A VCE saturation (Max) of 290mV @ 20mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V allows for a high level of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSS12200WT1G Features
the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS12200WT1G Applications
There are a lot of ON Semiconductor NSS12200WT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
