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NSS12100UW3TCG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSS12100UW3TCG
- Package: 3-WDFN Exposed Pad
- Datasheet:
- Stock: 8363
- Description: NSS12100UW3TCG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Frequency | 200MHz |
| Base Part Number | NSS12100 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.1W |
| Case Connection | COLLECTOR |
| Power - Max | 740mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 440mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 5V |
| Turn Off Time-Max (toff) | 240ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSS12100UW3TCG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 440mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.A transition frequency of 200MHz is present in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
NSS12100UW3TCG Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
NSS12100UW3TCG Applications
There are a lot of ON Semiconductor NSS12100UW3TCG applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
