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NSM80101MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSM80101MT1G
- Package: SC-74, SOT-457
- Datasheet:
- Stock: 8210
- Description: NSM80101MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 400mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power - Max | 400mW |
| Transistor Application | SWITCHING |
| Transistor Type | NPN + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 150MHz |
| Frequency - Transition | 150MHz |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSM80101MT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 10mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
NSM80101MT1G Features
the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 150MHz
NSM80101MT1G Applications
There are a lot of ON Semiconductor NSM80101MT1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
