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NSM6056MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSM6056MT1G
- Package: SC-74, SOT-457
- Datasheet:
- Stock: 9202
- Description: NSM6056MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 380mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Transistor Type | NPN + Zener Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 600mA |
| Turn Off Time-Max (toff) | 255ns |
| Turn On Time-Max (ton) | 35ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSM6056MT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The part has a transition frequency of 250MHz.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 600mA volts is possible.
NSM6056MT1G Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
NSM6056MT1G Applications
There are a lot of ON Semiconductor NSM6056MT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
