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NSDEMP11XV6T5G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSDEMP11XV6T5G
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 302
- Description: NSDEMP11XV6T5G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Other Diodes |
| Voltage - Rated DC | 80V |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MP11 |
| Pin Count | 6 |
| Number of Elements | 4 |
| Power Dissipation-Max | 0.5W |
| Element Configuration | Common Anode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 70V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Forward Current | 100mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 2A |
| Output Current-Max | 0.1A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 100mA DC |
| Forward Voltage | 1.2V |
| Max Reverse Voltage (DC) | 80V |
| Average Rectified Current | 100mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 80V |
| Peak Non-Repetitive Surge Current | 2A |
| Diode Configuration | 2 Pair Common Anode |
| Recovery Time | 4 ns |
| Reverse Test Voltage | 70V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSDEMP11XV6T5G Overview
A forward voltage of 1.2V will enable the device to operate.There is a maximum output voltage of 0.1A.Array is important to monArrayor the surge current and make sure that Array does not exceed 2A.This device will operate when the forward voltage is set to 100mA.In this case, the part can provide a current of 100mA.A reverse voltage peak of 100nA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 100nA, which is the current created by its reverse bias.
NSDEMP11XV6T5G Features
1.2V forward voltage
a maximum output voltage of 0.1A
a peak voltage of 100nA
a reverse voltage peak of 100nA
NSDEMP11XV6T5G Applications
There are a lot of ON Semiconductor NSDEMP11XV6T5G applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Free wheeling diode in low voltage converters
- Battery chargers
- Rectifiers for UBS
- Rectifiers in switch mode power supplies (SMPS)
- General Rectification
