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NSDEMP11XV6T1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NSDEMP11XV6T1G
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 2121
- Description: NSDEMP11XV6T1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 3.5pF |
| Subcategory | Other Diodes |
| Voltage - Rated DC | 80V |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MP11 |
| Pin Count | 6 |
| Number of Elements | 4 |
| Element Configuration | Common Anode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 70V |
| Power Dissipation | 500mW |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Forward Current | 100mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 2A |
| Output Current-Max | 0.1A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 100mA DC |
| Forward Voltage | 1.2V |
| Max Reverse Voltage (DC) | 80V |
| Average Rectified Current | 100mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 80V |
| Peak Non-Repetitive Surge Current | 2A |
| Diode Configuration | 2 Pair Common Anode |
| Recovery Time | 4 ns |
| Reverse Test Voltage | 70V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NSDEMP11XV6T1G Overview
This device will operate when the forward voltage is set to 1.2V.This device can support a maximum output voltage of 0.1A.Array should be a rule to monArrayor the surge current and not allow Array to exceed 2A.Devices that have a forward voltage of 100mA will operate.There can be a current drawn from this part of 100mA.This device has a capacitance of about 3.5pF farads.The reverse voltage peak of this device is 100nA.The maximum reverse leakage current from this semiconductor is 100nA, which corresponds to the reverse leakage current from that device when reverse biased.A derivative of the primary action of this electronic or electrical device is heat (energy loss).
NSDEMP11XV6T1G Features
1.2V forward voltage
a maximum output voltage of 0.1A
3.5pF farads
a peak voltage of 100nA
a reverse voltage peak of 100nA
NSDEMP11XV6T1G Applications
There are a lot of ON Semiconductor NSDEMP11XV6T1G applications of rectifier diode array.
- Crowbar applications
- General Rectification
- Rectifiers in switch mode power supplies (SMPS)
- Rectifiers for UBS
- Rectifier for drives applications
- Free wheeling diode in low voltage converters
- Battery chargers
