NSCT817-25LT1G

NSCT817-25LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NSCT817-25LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4090
  • Description: NSCT817-25LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 45V
Max Power Dissipation 225mW
Current Rating 100mA
Base Part Number NSCT817
Power - Max 225mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NSCT817-25LT1G Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.Single BJT transistor comes in a supplier device package of SOT-23-3 (TO-236).There is a 45V maximal voltage in the device due to collector-emitter breakdown.Collector current can be as low as 500mA volts at its maximum.

NSCT817-25LT1G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the current rating of this device is 100mA
the supplier device package of SOT-23-3 (TO-236)

NSCT817-25LT1G Applications


There are a lot of ON Semiconductor NSCT817-25LT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

In Stock

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