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NJW21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJW21193G
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 2870
- Description: NJW21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 200W |
| Frequency | 4MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Power - Max | 200W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 16A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 4V |
| Max Breakdown Voltage | 250V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NJW21193G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 8A 5V DC current gain.A collector emitter saturation voltage of 4V ensures maximum design flexibility.A VCE saturation (Max) of 4V @ 3.2A, 16A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 4MHz.A breakdown input voltage of 250V volts can be used.A maximum collector current of 16A volts is possible.
NJW21193G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
NJW21193G Applications
There are a lot of ON Semiconductor NJW21193G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
