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NJVMJD128T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJVMJD128T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 558
- Description: NJVMJD128T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.75W |
| Pin Count | 3 |
| Polarity | PNP |
| Element Configuration | Single |
| Power - Max | 1.75W |
| Halogen Free | Halogen Free |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 4V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A 4V |
| Current - Collector Cutoff (Max) | 5mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NJVMJD128T4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In extreme cases, the collector current can be as low as 8A volts.
NJVMJD128T4G Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
NJVMJD128T4G Applications
There are a lot of ON Semiconductor NJVMJD128T4G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
