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NJL4281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJL4281DG
- Package: TO-264-5
- Datasheet:
- Stock: 2323
- Description: NJL4281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 260V |
| Max Power Dissipation | 230W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 15A |
| Frequency | 35MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 230W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 35MHz |
| Transistor Type | NPN + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 35MHz |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 80 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 50.8mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 21 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-5 |
| Number of Pins | 5 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
NJL4281DG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 5A 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 35MHz in the part.During maximum operation, collector current can be as low as 15A volts.
NJL4281DG Features
the DC current gain for this device is 80 @ 5A 5V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 35MHz
NJL4281DG Applications
There are a lot of ON Semiconductor NJL4281DG applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
