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NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJL3281DG
- Package: TO-264-5
- Datasheet:
- Stock: 2729
- Description: NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-5 |
| Surface Mount | NO |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 260V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 15A |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 260V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 5A 5V |
| Current - Collector Cutoff (Max) | 50μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1A, 10A |
| Collector Emitter Breakdown Voltage | 260V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 3V |
| Max Breakdown Voltage | 260V |
| Collector Base Voltage (VCBO) | 260V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Height | 25.98mm |
| Length | 19.89mm |
| Width | 4.89mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NJL3281DG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 5A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 260V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor NJL3281DG applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
