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NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJL0281DG
- Package: TO-264-5
- Datasheet:
- Stock: 7215
- Description: NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Voltage - Rated DC | -260V |
| Max Power Dissipation | 180W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | -15A |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 260V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 3A 5V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 260V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 260V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Height | 26.111mm |
| Length | 20.02mm |
| Width | 5.182mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
NJL0281DG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -15A.There is a transition frequency of 30MHz in the part.A maximum collector current of 15A volts is possible.
NJL0281DG Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
NJL0281DG Applications
There are a lot of ON Semiconductor NJL0281DG applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
