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NJD35N04T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NJD35N04T4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2559
- Description: NJD35N04T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NJD35N04 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A 2V |
| Current - Collector Cutoff (Max) | 50μA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 2A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 90MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 350V |
| Frequency - Transition | 90MHz |
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 4A |
| Height | 2.38mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 350V |
| Max Power Dissipation | 45W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
NJD35N04T4G Overview
This device has a DC current gain of 2000 @ 2A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 20mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 90MHz.Single BJT transistor can be broken down at a voltage of 350V volts.Collector current can be as low as 4A volts at its maximum.
NJD35N04T4G Features
the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 90MHz
NJD35N04T4G Applications
There are a lot of ON Semiconductor NJD35N04T4G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
