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NGTB50N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NGTB50N120FL2WG
- Package: TO-247-3
- Datasheet:
- Stock: 4046
- Description: NGTB50N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 535W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 535W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 100A |
| Reverse Recovery Time | 256 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.2V |
| Test Condition | 600V, 50A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 311nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 118ns/282ns |
| Switching Energy | 4.4mJ (on), 1.4mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 21.4mm |
| Length | 16.25mm |
| Width | 5.3mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NGTB50N120FL2WG Descriptions
The NGTB50N120FL2WG is a durable and cost-effective Field Stop II Trench design that delivers outstanding performance in demanding switching applications with low on-state voltage and minimum switching loss. The IGBT is ideal for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is included in the device. The operating temperature of NGTB50N120FL2WG is -55°C~175°C TJ and its maximum power dissipation is 535W. NGTB50N120FL2WG has 3 pins and it is available in TO-247-3 packaging way.
NGTB50N120FL2WG Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High-Speed Switching
10 s Short Circuit Capability
These are Pb?Free Devices
NGTB50N120FL2WG Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
