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ContactNGTB40N120FL3WG
NGTB40N120FL3WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NGTB40N120FL3WG
- Package: TO-247-3
- Datasheet:
- Stock: 5520
- Description: NGTB40N120FL3WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 454W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 454W |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Max Collector Current | 160A |
| Reverse Recovery Time | 136 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.7V |
| Test Condition | 600V, 40A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 212nC |
| Td (on/off) @ 25°C | 18ns/145ns |
| Switching Energy | 1.6mJ (on), 1.1mJ (off) |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NGTB40N120FL3WG IGBT Description
This Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, delivering both low on-state voltage and little switching loss. It is constructed using a durable and cost-effective Ultra Field Stop Trench design. The IGBT is a good choice for solar and UPS applications. A soft and fast co packaged free wheeling diode with a low forward voltage is incorporated into the device. NGTB40N120FL3WG has a high maximum junction temperature of 175°C and is improved for high-speed switching purpose applications.
NGTB40N120FL3WG IGBT Features
Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High-Speed Switching
These are Pb?Free Devices
NGTB40N120FL3WG IGBT Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
Industrial Applications
Automobiles
