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NGTB25N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NGTB25N120FL2WG
- Package: TO-247-3
- Datasheet:
- Stock: 8375
- Description: NGTB25N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 33 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 385W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 385W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 50A |
| Reverse Recovery Time | 154 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| IGBT Type | Field Stop |
| Gate Charge | 178nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 87ns/179ns |
| Switching Energy | 1.95mJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NGTB25N120FL2WG Description
The Field Stop II Trench architecture of this Insulated Gate Bipolar Transistor (IGBT) ensures exceptional performance in demanding switching applications, with low on-state voltage and little switching loss. The IGBT is ideal for solar and UPS applications. A soft and quick copackaged free wheeling diode with a low forward voltage is included in the device.
NGTB25N120FL2WG Features
? Field Stop Technology for Extremely Efficient Trenching
? Maximum TJ = 175°C
? Diode with a Soft Fast Reverse Recovery
? High-speed switching optimized
? Short-circuit capability of 10 seconds
? These devices are free of lead.
NGTB25N120FL2WG Applications
? Inverter solar
? UPS (Uninterruptible Power Supply) (UPS)
? Tack welding
