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NGTB15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NGTB15N60S1EG
- Package: TO-220-3
- Datasheet:
- Stock: 182
- Description: NGTB15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Turn On Time | 93 ns |
| Test Condition | 400V, 15A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 440 ns |
| IGBT Type | NPT |
| Gate Charge | 88nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 65ns/170ns |
| Switching Energy | 550μJ (on), 350μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 15.75mm |
| Length | 10.28mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 117W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 47W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 65 ns |
| Power - Max | 117W |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 170 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 270 ns |
| JEDEC-95 Code | TO-220AB |
NGTB15N60S1EG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Non?Punch Through (NPT) Trench construction and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co?packaged reverse recovery diode with a low forward voltage.
NGTB15N60S1EG Features
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
5 s Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb?Free Device
NGTB15N60S1EG Applications
White Goods Appliance Motor Control
General Purpose Inverter
AC and DC Motor Control
