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NDS9955 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS9955
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5997
- Description: NDS9955 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 50V |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
NDS9955 Description
SO-8 N channel enhanced mode power field effect transistors are produced using Fairchild's unique high cell density DMOS technology. This very high-density process is specially tailored to provide superswitching performance and minimize on-resistance. These devices are particularly suitable for low-voltage applications that require fast switching, such as disk drive motor-controlled battery-powered circuits. Low series power consumption and resistance to transient.
NDS9955 Features
3.0A50VR=0.130Ω@V=10V
RDN=0.200Ω @VG8=4.5V
High density cell design for extremely low Rpsion
High power and current handling capabilityin a widely used surface mount package.
Dual MOSFET in surface mount package.
NDS9955 Applications
low-voltage applications
