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NDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS9953A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7569
- Description: NDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 900mW |
| Current Rating | -2.9A |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 21ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 2.9A |
| Threshold Voltage | -1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.6 V |
| Width | 4.05mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
NDS9953A Description
These P-Channel enhanced power field effect transistors are produced using Xiantong's proprietary high cell density DMOS technology. This high-density process is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
NDS9953A Features
-2.9A，-30VR=0.13@V=-10V.
High density cell design for extremely low Rpsion
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package
NDS9953A Applications
low-voltage applications
