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NDS9933
  • NDS9933

NDS9933

NDS9933 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NDS9933
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 305
  • Description: NDS9933 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 110m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant

NDS9933             Description

 

  This P-channel enhanced power field effect transistor is produced using Fairchild's unique high cell density DMOS technology. This very high density process is specially tailored for miniaturized on-resistors and provides excellent switching performance.

These devices are particularly suitable for low-voltage applications, such as DC motor control and DC/DC conversion, with fast switching speed and low on-line power loss. Resistance to transients is necessary.

 

 

NDS9933                     Features


·-2.8A,-20V.Rs(on)=0.14Ω @VGS=-4.5V

RDs(on)=0.19Ω@VGS=-2.7V RDs(on)=0.20Ω @VGs=-2.5V

*High density cell design for extremely low RDs(on)

·High power and current handling capability in a widely used surface mount package.

Dual MOSFET in surface mount package

 

NDS9933                   Applications


 low-voltage applications





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