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NDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS8958
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8187
- Description: NDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.6 V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 50mOhm |
| Max Power Dissipation | 900mW |
| Current Rating | 2.9A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A 4A |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 20ns |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 40 ns |
NDS8958 Description
These double N-channel and P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary high cell density. DMOS technology. This very high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as notebook power management and other battery-powered circuits, which have fast switching speeds and low online power consumption. Resistance to transients is necessary.
NDS8958 Features
N-Channel 5.3A30VRpoN=0.035@Va=10V.
P-Channel-4.0A-30V，Rs=0.065@V=-10V
High density cell design or extremely low RpsoN
High power and current handling capability in a widely used suriace mount package.
Dual(N &P-Channel) MOSFET in surface mount package
NDS8958 Applications
low-voltage applications
