NDS8947

NDS8947 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NDS8947
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5447
  • Description: NDS8947 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 65mOhm
Voltage - Rated DC -30V
Max Power Dissipation 900mW
Terminal Form GULL WING
Current Rating -4A
Number of Elements 2
Row Spacing 6.3 mm
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 9 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -4A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.6 V
Width 4.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

NDS8947            Description

 

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

 

NDS8947                Features


4A-30VR=0065@V=-10V

ROsiON)=0.1Ω@Vas=-4.5V

High density cell design for extremely low Rpsion

High power and current handling capability in a widely used surface mount package.

Dual MOSFET in surface mount package.

 

NDS8947                 Applications

 

notebook computer power management

other battery powered circuits

 






In Stock

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