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NDS8936 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS8936
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3292
- Description: NDS8936 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 35mOhm |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 900mW |
| Current Rating | 5.3A |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 13ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 5.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.6 V |
| Width | 4.05mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
NDS8936 Description
These N-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary high cell density. DMOS technology. This very high-density process is tailored to minimize on-resistance and provides excellent switching performance. These devices are particularly suitable for low-voltage applications such as laptops, power management and other fast switching durable circuits. Low embedded power loss and anti-transient are required.
NDS8936 Features
5.3A,30VRN=0.035@V=10V
Rps=0.05Ω@Vas=4.5V.
High density cell design for extremely low RDSON
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
NDS8936 Applications
low-voltage applications
